onsemi AFGH4L40T120RW: 1200 V FS7 IGBT for Automotive Power Stages
The onsemi AFGH4L40T120RW is a Field Stop VII (FS7) IGBT in a Power TO-247-4L package, rated 1200 V collector-emitter with roughly 80 A continuous collector current and 120 A pulsed. Typical Vce(on) is about 1.73 V at 15 V gate drive and 40 A, with switching energy near 3.38 mJ on and 1.7 mJ off under the datasheet 600 V / 40 A test. AEC-Q101 automotive qualification and an available PPAP path make it a candidate for e-compressor inverters, EV PTC heaters and on-board chargers that need high junction temperature headroom (up to 175 °C) and a short-circuit withstand around 6 µs. The four-lead TO-247 Kelvin-emitter style package helps reduce gate-loop inductance versus a classic three-lead TO-247. Design notes that matter in practice: size the gate resistor from the 171 nC gate charge and your driver peak current, keep the Kelvin sense clean, and verify RthJC (about 0.26 °C/W) against the heatsink and airflow budget. Confirm the exact ordering suffix and date-code policy before locking a BOM.
Detailed parameters and stock for the AFGH4L40T120RW onsemi 1200V Field Stop IGBT, TO-247-4L are listed on ChipApex, an independent electronic components distributor in Shenzhen. Catalog home: ChipApex.
Further reading
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