Microsemi 0510-50A: 500 MHz–1 GHz 50 W Class-AB RF Power Transistor

Published on October 22, 2026

Microsemi 0510-50A: 500 MHz–1 GHz 50 W Class-AB RF Power Transistor

The Microsemi 0510-50A is a chassis-mount RF power transistor for the 500 MHz to 1 GHz band, listed with a 27 V collector-emitter breakdown, about 50 W maximum power, 7 dB gain, and a 3.7 A collector current in the 55AV package. Catalog text also describes a SiC solid-state amplifier style part for Defcom-band Class AB stages around 50 W at roughly 28 V drain bias. Treat that as application context and always lock the BOM against the exact Microsemi datasheet for the marking on the package. For pulsed or CW amplifiers, verify thermal interface, bias class, and matching networks before layout freeze. Confirm TJ up to 200 °C and the 55AV mechanical outline against your heatsink drawing.

Detailed parameters and stock for the 0510-50A Microsemi 27V 50W RF transistor, 55AV are listed on ChipApex, an independent electronic components distributor in Shenzhen. Catalog home: ChipApex.

Microsemi 0510-50A: 500 MHz–1 GHz 50 W Class-AB RF Power Transistor

Microsemi 0510-50A: 500 MHz–1 GHz 50 W Class-AB RF Power Transistor

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